| 초록 |
Cu2ZnSn(S,Se)4 thin film solar cells have been fabricated using sputtered Cu/Sn/Zn metallic precursors on Mo coated sodalime glass substrates without using a toxic H2Se and H2S atmosphere. The as-deposited metallic precursors were sulfo-selenized in a graphite box containing S and Se powder using a rapid thermal annealing (RTA) furnace. Thin film solar cells were fabricated after sulfo-selenization process using a 40~60 nm CdS buffer layer, a 100 nm intrinsic ZnO, a 600 nm Al doped ZnO, and Al/Ni top metal contact. The Effect of annealing process pressure and CdS buffer layer thickness on the morphological, structural and electrical properties have been studied using field emission scanning electron microscopy, X-ray diffraction, Raman spectroscopy, I-V and quantum efficiency measurement system, and time resolved photoluminescence spectroscopy, respectively. The fabricated Cu2ZnSn(S,Se)4 thin film solar cell shows the best conversion efficiency of 11.80% (Voc : 484.6 mV, Jsc : 37.50 mA/cm2, FF : 64.91%, and active area : 0.3 cm2). Details about other experimental results will be discussed during the presentation. |
