| 초록 |
Conventional fabrication method of FET with top gate structure in which active layer was formed on source-drain electrode resulted in poor device performance due to the contact resistance between the layers. In this study, all plastic field effect transistors with top gate structure were fabricated by using polyaniline as electrode, dielectric, active layers and substrate, respectively. In the device fabrication, the active layer and electrode were prepared by doping control to reduce the fabrication process and to make thinner, flexible device. The effects of fabrication method on the device characteristics will be discussed. |
