| 초록 |
In present work, the co-sputter and stack method is employed to deposit Cu, Zn and Sn precursors and study of alloying behavior was performed with respect to temperature. The chemical, structural, and morphological properties of annealed precursors are analyzed through different technique. The X-ray diffraction study reveals, both precursors start to alloy above 400 ℃ and forms pure CZTSSe phase above 500 ℃. The morphological study shows the co-sputtered precursor exhibits homogenous distribution of metallic grains with compact morphology and negligible voids compared to stack. These homogenous and smaller metallic grains start to alloy at 500 ℃ much faster as compared to stack, which pointedly assists the formation of larger absorber grains. The XRF measurements showed the precursor chemical composition changes with change in annealing temperature. The improved morphology of co-sputtered precursor showed over 10 % device efficiency as that of the stack, proving this method can be used to achieve the high efficiency in kesterite based TFSCs with reduced process time. |
