| 학회 |
한국재료학회 |
| 학술대회 |
2017년 가을 (11/15 ~ 11/17, 경주 현대호텔) |
| 권호 |
23권 2호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
ALD모드로 Si(100)기판위에 성장한 ZnO의 성장 메커니즘 |
| 초록 |
Zinc oxide(ZnO) growth mechanism by atomic layer deposition(ALD) on Si(100) substrate were investigated. The ALD mechanism was determined using each substrate orientation and temperature dependent deposition rate. ZnO deposited temperature was confirmed as 75°C ~ 150°C and grow per cycle(GPC) was as 1.0Å ~ 2.0Å. The preferred orientation was changed from (002) to (100) with increasing temperature. The changed preferred orientation was related the grain sizes, residual and thermal stress. Using X-ray diffraction data was calculated grain sizes and Lotgering factor. The ZnO thin films were investigated using field emission scanning electron microscope(Fe-SEM) and X-ray diffraction (XRD). |
| 저자 |
조승희, 김대식, 정우섭, 김철, 변동진
|
| 소속 |
고려대 |
| 키워드 |
ZnO; Growth mechanism; ALD
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| E-Mail |
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