| 학회 |
한국재료학회 |
| 학술대회 |
2008년 가을 (11/07 ~ 11/07, 차세대융합기술연구원) |
| 권호 |
14권 2호 |
| 발표분야 |
전자재료 |
| 제목 |
Fabrication of Nb/Al and Ta/Al Superconducting Tunnel Junctions |
| 초록 |
Superconducting Tunnel Junction(STJ) detectors are currently under extensive investigation because of their very good theoretical energy resolution and photon counting ability over the broad wavelength range from X-ray to NIR. We report the succcess in fabrication of Nb/Al-AlOx-Al/Nb and Ta/Al-AlOx-Al/Ta structure deposited on sapphire substrates. The fabrication methods include UV photolithography, DC Sputtering, RIE and PECVD techniques. The characterization experiment was undertaken in an Adiabatic Demagnetization Refrigerator at an operating temperature below 50mK. The details of experimental investigations for STJ side-lengths(20~80µm) are discussed. The measured I-V curves were used to derive the detector performance indicators such as energy gap, energy resolution, normal resistance, normal resistivity, dynamic resistance and dynamic resistivity. The STJ material analysis results obtained from XRD and AFM are also presented. |
| 저자 |
Ho Seop Yoon1, Min Kyu Yang1, Jeon-Kook Lee1, Young-Sik Park2, Jang-Hyun Park2, Sug-Whan Kim3
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| 소속 |
1Korea Institute of Science and Technology(KIST), 2Korea Astronomy and Space Science Institute(KASI), 3Yonsei Univ. |
| 키워드 |
STJ; Ta; Nb
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| E-Mail |
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