| 초록 |
We have investigated properties of polyimide gate insulators for organic thin-film transistors (OTFTs), one of important components of acive matrix displays on plastic substrates. Gate insulators for OTFT requires high-dielectric constant, heat resistance, chemical resistance, and photosensitivity. To achieve these goals, we have prepared the polyimide with photosensitive coumarin moiety as a gate insulator. A series of polyimide precursors was prepared from three kinds of dianhydrides (PMDA, BTDA, CBDA) and novel aromatic diamine, 7-(3,5-diaminobenzoyloxy) coumarine (DA-CM). Photopatternability of the polyimide precursor film was investigated and negative pattern was formed by exposure dose of 5 J/cm2. Surface morphology of the thin films before and after photopatterning process was examined by Atomic Force Microscopy (AFM). In addition, we have fabricated OTFTs with pentacene and photosensitive polyimide as a semiconductor and a gate insulator, respectively. The OTFT characteristics are going to be discussed in more detail with the electrical properties of the thin polyimide film. |
