| 학회 | 한국화학공학회 |
| 학술대회 | 2003년 봄 (04/25 ~ 04/26, 순천대학교) |
| 권호 | 9권 1호, p.1125 |
| 발표분야 | 재료 |
| 제목 | Preparation of GaP particles by spray pyrolysis |
| 초록 | LED (Light Emitting Diode) is a kind of semiconductor that transmits and receives a signal by transforming electrical signal into infrared or visible light. LED has various advantages of that low power consumption, semi-permanent and realization of full color. Recently, Ⅲ-Ⅴ semiconductors such as InGaAlP, GaP, InP and GaAlAs are applied for LED because of low band gap energy. In this research, GaP particles, Ⅲ-Ⅴ semiconductors, used for the manufacture of red and green diodes were prepared by spray pyrolysis technique. Gallium nitrate hydrate and ammonium phosphate dibasic were used as precursors for Ga and P. The crystal structures were characterized by X-ray diffractometry (XRD). The microstructural images and compositional analysis were carried out by scanning electron microscope (SEM) and wavelength dispersive spectroscopy (WDS), respectively. |
| 저자 | 구기영, 박승빈 |
| 소속 | 한국과학기술원 |
| 키워드 | LED (Light Emitting Diode); Ⅲ-Ⅴ semiconductors; GaP; spray pyrolysis |
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