| 학회 | 한국화학공학회 |
| 학술대회 | 2006년 가을 (10/27 ~ 10/28, 고려대학교) |
| 권호 | 12권 2호, p.2543 |
| 발표분야 | 재료 |
| 제목 | Influence of sputtering parameters on the optical and electrical properties of rf–sputtered In2O3-ZnO films |
| 초록 | The In2O3-ZnO (IZO) thin film, as a promising transparent conducting oxide (TCO), has attracted great attention because of its high electrical conductivity, high optical transparency, smooth surface and low internal stress for applications of solar cell, electroluminescence devices, organic light emitting displays and liquid crystal displays. The IZO thin films were prepared by radio frequency (rf) reactive magnetron sputtering technique and their characteristics were studied by varying various process parameters such as rf power, gas pressure, distance of target to substrate, film thickness. For a 300 nm thick IZO film grown at room temperature in pure argon, the resistivity was as low as 3.63 × 10-4 Ω cm and the average transmittance in the visible region was about 85%. |
| 저자 | 리유에롱, 민수련, 조한나, 정지원 |
| 소속 | 인하대 |
| 키워드 | IZO thin film; transparent conducting oxide (TCO); radio frequency (rf) reactive magnetron sputtering |
| 원문파일 | 초록 보기 |
