| 학회 |
한국고분자학회 |
| 학술대회 |
2003년 가을 (10/10 ~ 10/11, 부경대학교) |
| 권호 |
28권 2호, p.88 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Synthesis and Application of Functional Polysulfonium Salts for AFM Anodization Lithography |
| 초록 |
Photoacid generators (PAGs) have been widely used for a chemically amplified photoresist. Among these PAGs, arylsulfonium salts as a role of an electron acceptor enable the high scan speed lithography using atomic force microscope (AFM). For AFM anodization lithography, new types of resists that are consisted of arylmethacrylate homopolymer and various acryl types of copolymers containing sulfonium group were synthesized and characterized. The physical properties of resists and lithographic factors affecting the high speed AFM lithography will be discussed. |
| 저자 |
박상욱, 제갈진, 김용일, 이해원
|
| 소속 |
한양대 |
| 키워드 |
AFM Lithography; Photoresist; Photoacid generator; Nanopatterning
|
| E-Mail |
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