| 학회 |
한국화학공학회 |
| 학술대회 |
2002년 가을 (10/24 ~ 10/26, 서울대학교) |
| 권호 |
8권 2호, p.5290 |
| 발표분야 |
재료 |
| 제목 |
식각 손상된 InGaN/GaN 다중 양자우물 발광 다이오드의 전기적 특성 회복 |
| 초록 |
The improvement of etch-damaged electrical properties of InGaN/GaN MQW LEDs grown by metal-organic chemical vapor deposition has been studied in terms of surface treatment. Annealing and KOH treatment after etching and before metallization recovered the electrical properties substantially. This is due to improvement in surface morphology with annealing and KOH treatment after etching and before metallization. Therefore, we were able to improve the electrical properties with annealing and KOH treatment after etching. |
| 저자 |
최락준, 박형조, 최창선, 한윤봉
|
| 소속 |
전북대 |
| 키워드 |
Etch-damaged Electrical Properties; InGaN/GaN QW LEDs; LED fabrication
|
| E-Mail |
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| 원문파일 |
초록 보기 |
