| 학회 |
한국재료학회 |
| 학술대회 |
2006년 봄 (05/19 ~ 05/20, 경상대학교 ) |
| 권호 |
12권 1호 |
| 발표분야 |
전자재료 |
| 제목 |
Low voltage operating ZnO thin-film transistors with Ni doped BaSrTiO3 high-K gate insulator for transparent and mobile electronics |
| 초록 |
Transparent ZnO based thin film transistors (TFTs) have received intensive interest due to their potential of replacing hydrogenated amorphous or polycrystalline silicon (a-Si:H or poly-Si) TFTs. Zinc oxide (ZnO) is a transparent compound semiconductor with a wide band gap (3.37 eV) which can be grown as a polycrystalline film at low or even room temperature. ZnO is, therefore, considered to be an ideal material for serving as the channel layer in transparent and flexible TFTs. As an important element, gate insulators for ZnO based TFTs have received increasing attention because ZnO-TFTs switching voltage can be reduced by using high-K gate dielectrics which can lead to high capacitance value. In this presentation, we report on the role of Ni doping in markedly reducing leakage currents in Ba0.6Sr0.4TiO3 (BST) high-K gate insulator. Undoped and 1% Ni-doped BST thin films, deposited by rf magnetron sputtering at room temperature on Pt/Ti/SiO2/Si substrates, showed relative dielectric constants of ~20-25. 1% Ni-doped BST films exhibited leakage current densities below 1x10-7 A/cm2 compared to the much higher value of 5x10-4 A/cm2 characteristic of undoped BST films. ZnO based TFTs using 1% Ni-doped BST gate dielectrics exhibits low voltage operation less than 10 V with excellent saturation due to high dielectic constant of Ni-doped BST films. This work demonstrates that room temperature fabricated ZnO-based TFTs using 1% Ni-doped BST gate insulator will open up a promising route for the development of low voltage operating transparent and mobile electronics. |
| 저자 |
김정웅1, 김영웅1, 최덕균1, 김일두2, 홍재민2
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| 소속 |
1한양대, 2KIST 광전자재료연구센터 |
| 키워드 |
Low operation voltage; ZnO-TFTs; Ni-doped BST
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| E-Mail |
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