| 학회 | 한국재료학회 |
| 학술대회 | 2006년 봄 (05/19 ~ 05/20, 경상대학교 ) |
| 권호 | 12권 1호 |
| 발표분야 | 반도체재료 |
| 제목 | Hydrogen effect of ZnO:Al by RF magnetron sputtering in H2/Ar atmosphere |
| 초록 | AZO (ZnO:Al) films were fabricated by RF magnetron sputtering in H2/Ar (5% H2) atmosphere, and electrical and optical properties were investigated. The substrate temperatures were varied at RT, 100℃, 150℃ and 200℃. The resistivity of the films grown in H2/Ar (5% H2) were reduced from 7.67 10-4 to 5.95 10-4 in comparison with that of films deposited in Ar (100%) and the transmittance in wavelength range of 200~500 nm were over 93%. Changes in the electrical properties of the ZnO:Al films are shown in Fig. 1. The electrical properties of the AZO films improved to 5.95 10-4 in H2/Ar (5% H2). The reason is that hydrogen plays an important role in n-type conduction as a donor [1-2]. Fig.2 shows optical transmittance spectra in the wavelength ( ) range 300 ~ 800 nm. It can be seen that the average optical transmittance in the visible light wavelength range is over 93%. |
| 저자 | Jeong-Seop Lee1, Chang-Sik Son2, Jae-Sung Hur3, Byoung-Hoon Lee4, Jung-Bin Song1, Jong-Hyeob Baek2, In-Hoon Choi1 |
| 소속 | 1Department of Materials Science and Engineering, 2Korea Univ., 3Department of Photonics, 4Silla Univ. |
| 키워드 | hydrogen plasma; AZO; RF magnetron sputtering |
