| 학회 |
한국고분자학회 |
| 학술대회 |
2005년 가을 (10/13 ~ 10/14, 제주 ICC) |
| 권호 |
30권 2호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Regioregular poly(3-hexylthiophene) field-effect transistors fabricated by dip-coating process on the rubbed gate insulator |
| 초록 |
Organic semiconducting materials have potential advantages to use as a semiconducting layer in field-effect transistors because they could be applicable to a cheap and large area integrated circuits on plastic substrates. Among these organic materials, a solution processible conjugated polymer, especially regioregular poly(3-hexylthiophene) (RR-P3HT), is the best promising candidate, which has received considerable attention as a semiconducting conjugated polymer with a relatively high field-effect mobility because of strong interchain interactions of thiophene units. It is known that the high degree of crystallinity in RR-P3HT leads to high charge mobility and a number of external factors can affect the degree of order of the lamellar structure of P3HT in the microcrystalline regions in the film. By using the rubbed gate insulators, many attempts had been implemented to increase the perfomance of organic field-effect transistors (OFETs). In our work, we have fabricated RR-P3HT OFETs by a dip-coating process on a rubbed polyimide gate insulator. They have shown anisotropic electrical properties, such as, field-effect mobility between the perpendicular and parallel rubbing directrions to the channel of OFETs. These relations between the rubbing directions and anisotroic performances will be discussed. |
| 저자 |
백강준1, 강석주1, 노용영2, 김지은3, 김동유1
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| 소속 |
1광주과학기술원, 2OE Group, 3Cavendish Laboratory Univ. of Cambridge |
| 키워드 |
rubbing; P3HT; OFETs
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| E-Mail |
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