| 학회 | 한국재료학회 |
| 학술대회 | 2006년 봄 (05/19 ~ 05/20, 경상대학교 ) |
| 권호 | 12권 1호 |
| 발표분야 | 반도체재료 |
| 제목 | Prediction of Dynamic Heat Flux for 450mm Single Crystal Silicon Growth under CUSP Magnetic Field |
| 초록 | A diameter of silicon wafer would be increased from 300 to 450mm as the minimum feature size with C-MOSFET becomes less than 45nm. We developed a simulation program of dynamic heat flux for 450mm single crystal silicon growth by designing a hot-zone of 450mm Czochralski silicon grower. The process parameters. ; pull rate, crucible rotation rate, seed rotation rate, crucible size, gap, melt level, type of static magnetic, magnetic flux density, coil position, and so on were figured out to achieve the successful growth of pure silicon ingot with any agglomerated defect free. This paper describes finite element method simulation for heat flux in large diameter Czochralski crucibles under the influence of several static CUSP magnetic field. Such fields are expected to provide an additional means to influence the melt behaviour. We confirmed that the magnetic flux density and coil position was dependent on the temperature gradient (G) and the difference of temperature gradient between the ingot center and edge (ΔG) under CUSP magnetic field. *This work was financially supported by Korea Ministry of Science & Technology through the NRL program. |
| 저자 | Wan-Gam Song1, Jin-Woo Jung2, Joon-Hoi Kim1, Gon-Sub Lee2, Jea-Gun Park1 |
| 소속 | 1Nano SOI Process Laboratory, 2Hanyang Univ. |
| 키워드 | Czochralski; 450mm; CUSP |
