| 학회 |
한국고분자학회 |
| 학술대회 |
2011년 가을 (10/06 ~ 10/07, 김대중 컨벤션센터) |
| 권호 |
36권 2호 |
| 발표분야 |
유기전자소자용 소재 및 소자(분자전자소재 부문위원회) |
| 제목 |
Tunable electrical properties of Reduced Graphene Oxide Composite via Self-Assembled Monolayers |
| 초록 |
Graphene is considered the hottest material because of its excellent electrical and optical properties. To use graphene in electronics, tuning the electrical characteristics such as work function(WF) of graphene is an important issue. In this study, the electrical characteristics of reduced graphene oxide(RGO) composites were controlled via self-assembled monolayers (SAMs) on itself. PFS and APS were used as SAM reagents for the p- and n-type doping of graphene. SAMs were formed stably on the RGO and the effect of SAMs doping was confirmed by the change of the WF and the modulation of Dirac voltage. The graphene transistor based on the RGO as a semiconductor showed a high field-effect mobility of 1.29 cm2/Vs. To utilize the tuned WF of RGO, solution processed p-type organic thin film transistors with RGO electrodes were also demonstrated. The field-effect mobility of the devices with F8T2 was enhanced from 9x10-5 to 4x10-3 cm2/Vs due to the reduced hole injection barrier. |
| 저자 |
강보석1, 임수진2, 조새벽1, 김현호1, 이성규1, 조길원1
|
| 소속 |
1POSTECH, 2LG화학 |
| 키워드 |
graphene; graphene oxide; transistor; doping
|
| E-Mail |
|
