| 초록 |
Heterostructures of Si1-xGex have drawn considerable interest because of new capabilities that they can offer. Typical experimental studies of the solid phase epitaxy involve depositing a film of Si1-xGex epilayer on a Si substrate, amorphizing from the free surface to a certain depth and then annealing so that the amorphized layer can regrow epitaxially on the underlying substrate. Despite the significant advance made in the SPE, there still exists an anomaly with regard to the composition dependence of the activation energy of the growth. As the composition x in Si1-xGex increases, the activation energy goes through a maximum instead of showing a monotonic change from pure silicon to pure germanium. In this paper, we present a theoretical model that can explain quantitatively the composition dependence in an a priori manner.
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