| 학회 | 한국고분자학회 |
| 학술대회 | 2005년 봄 (04/14 ~ 04/15, 전경련회관) |
| 권호 | 30권 1호, p.697 |
| 발표분야 | 분자전자 부문위원회 |
| 제목 | Polyimide Hybrid Films for Gate Insulators of Organic Thin Film Transistor |
| 초록 | Polyimides have been widely used as a material for electro-optic devices on their own advantages, such as excellent thermal property, good mechanical property, and electrical property, etc. We have synthesized new hybrid films from blends of soluble polyimide and polyamic acid solution, which can be used for gate insulators of organic thin film transistor. The soluble polyimide were synthesized from 5-(2,5-dioxotetrahydrofuryl)-3-methyl-3-cyclohexene-1,2-dicarboxylic anhydride [DOCDA] and functional diamine, 1-(3,5-diaminophenyl) -3-octadecyl-pyrrolidine-2,5-dione [DA-L-18IM]. The polyamic acid was prepared from 4,4'-diaminodiphenylmethane [MDA] and cyclobutane-1,2,3,4-tetracarboxylic dianhydride [CBDA] in NMP. The hybrid films as a gate dielectric layer were used to fabricate flexible organic thin film transistors (OTFTs) with pentacene as an active semiconductor. It is well known that the device performance of OTFTs can be controlled by surface properties of the gate dielectrics. In this study, we had developed a new method to control the surface polarity of the gate dielectrics by a blend of two polymer solutions. We have investigated a relationship of the surface properties (surface morphology, surface tension, etc) of the hybrid films with OTFT charactristics. The performance of the pentacene OTFT with the polyimide hybrids was improved a lot, which gave the field effect hole mobility of 1.34~4.84 cm2/Vs and low operating voltage as shown in Figure 1. More detailed discussion about the device performance enhancement will be given with the surface and electrical properties of the polyimide films. Figure 1. OTFT characteristics and AFM images of polyimide hybids films |
| 저자 | 표승문, 손현삼, 최중근, 이미혜 |
| 소속 | 한국화학(연) |
| 키워드 | polyimide; hybrid; gate insulator; OTFT |
