| 학회 |
한국화학공학회 |
| 학술대회 |
2002년 봄 (04/26 ~ 04/27, 강원대학교) |
| 권호 |
8권 1호, p.1849 |
| 발표분야 |
재료 |
| 제목 |
나노 크기의 InGaN/GaN 다층양자우물 LED의 제조 |
| 초록 |
Plasma-induced damage of InGaN/GaN multiple quantum well (MQW) LEDs has been studied in terms of forward turn-on and reverse breakdown voltages, together with etch rate and surface morphology. The physical degradation of sidewall along with rough surface morphology of n-GaN caused by increased ion scattering induced the deterioration of the forward and reverse voltages. The forward turn-on voltage was relatively independent of the pressure up to 20 mTorr. The reverse breakdown voltage showed the worst degradation at 75 % Cl2 mainly because of a sidewall contamination. It was found that the turn-on voltage is sensitive to the surface roughness of the etched n-GaN and the breakdown voltage is strongly affected by the sidewall contamination. Annealing under nitrogen after the mesa etching improved the electrical properties of the of InGaN/GaN MQW LEDs
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| 저자 |
한윤봉 |
| 소속 |
전북대 |
| 키워드 |
Fabrication; InGaN/GaN mutiple quantum well; Light-emitting diode
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| E-Mail |
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| VOD |
VOD 보기 |
| 원문파일 |
초록 보기 |
