| 초록 |
Novel gate dielectric materials are required for successful developments of flexible organic thin film transistors, in order to replace the inorganic insulators which require vacuum deposition at high temperatures. We have synthesized high-dielectric polymers, and fabricated organic thin film transistors (OTFTs) based on pentacene, employing these polymers as the spin-on gate insulator. These OTFTs showed excellent device properties, as seen by the electrical characteristics such as the charge mobility and the threshold voltage. In this presentation, the electrical properties of dielectric layers, and their effects on the mobility of charge carriers will be discussed in details. |
