| 학회 |
한국재료학회 |
| 학술대회 |
2011년 가을 (10/27 ~ 10/29, 신라대학교) |
| 권호 |
17권 2호 |
| 발표분야 |
B. Nanomaterials and Processing Technology(나노소재기술) |
| 제목 |
Effects of sputtering power on the growth of Mg and Ga co-doped ZnO thin films by RF magnetron sputtering |
| 초록 |
Mg and Ga co-doped ZnO (MxGyZzO, x+y+z=1, x=0.05,y=0.02 and z=0.93) thin films were prepared on glass substrates by RF magnetron sputtering technique with different sputtering power from 100 W to 200 W at 350 °C. The effect of sputtering power on the structural, morphological, compositional, electrical, and optical properties of MGZO thin films were investigated. The X-ray diffraction patterns showed that all the MGZO thin films were grown as a hexagonal wurtzite phase with c-axis preferred orientation without secondary phase such as MgO, Ga2O3, and ZnGa2O4. The diffraction peaks from (0002) plane of ZnO:Ga:Mg thin films were enhanced with increasing the sputtering power. The (0002) peak positions of MGZO thin films were not significantly changed regardless of sputtering power. The cross-sectional field emission scanning electron microscopy images of MGZO thin films showed that all the thin films have a columnar structure and thickness increased with increasing sputtering power. The MGZO thin film deposited at the sputtering power of 175 W showed the best electrical characteristics in terms of the carrier concentration (5.23ｘ1020 cm-3), charge carrier mobility (17.30 cm2V-1s-1), and a minimum resistivity (6.89ｘ10-4 Ωcm). UV-visible spectroscopy studies showed that the MGZO thin films were a high transmittance over 80 % in the visible region and the absorption edge of MGZO thin films were very sharp and shifted toward lower wavelength side from 360 nm to 330 nm with increasing the sputtering power. The band gap energy of MGZO thin films were wider from 3.40 eV to 3.71 eV with increasing the sputtering power. |
| 저자 |
In Young Kim1, Seung Wook Shin1, Jin Hyoek Kim1, Gi Seok Heo2, Jong-Ha Moon3
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| 소속 |
1Department of Material Science and Engineering, 2Nanoelectronics Team, 3Honam Technology Service Division |
| 키워드 |
Mg and Ga co-doped ZnO; Trans Parent Oxide; RF magnetron sputter; Quaternary compound
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| E-Mail |
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