| 학회 | 한국재료학회 |
| 학술대회 | 2012년 봄 (05/17 ~ 05/18, 무주덕유산리조트) |
| 권호 | 18권 1호 |
| 발표분야 | C. 에너지/환경 재료(Energy and Environmental Materials) |
| 제목 | Transparent conducting chracteristics of Mg and Ga co-doped ZnO thin films on flexible substrates by RF magnetron sputter technique : Effect of sputtering power |
| 초록 | ABSTRACT Mg and Ga co-doped ZnO (MxGyZzO, x+y+z=1, x=0.05,y=0.02 and z=0.93) thin films were prepared on flexible polyethylene terephtalate substrates by RF magnetron sputtering technique with different sputtering power from 75 W to 150 W at RT. The thickness of all films was fixed by 600nm. The effect of sputtering power on the structural, morphological, compositional, electrical, and optical properties of MGZO thin films which had same thckmess were investigated. The X-ray diffraction patterns showed that all the MGZO thin films were grown as a hexagonal wurtzite phase with c-axis preferred orientation without secondary phase such as MgO, Ga2O3, and ZnGa2O4. The diffraction peaks from (0002) plane of MGZO thin films showed tendency with increasing the sputtering power. The (0002) peak positions of MGZO thin films were not significantly changed regardless of sputtering power. The cross-sectional field emission scanning electron microscopy images of MGZO thin films showed that all the thin films have a columnar structure and dense morphology. The MGZO thin film deposited at the sputtering power of 150 W showed the best electrical characteristics in terms of the carrier concentration (5.52ｘ1020 cm-3), charge carrier mobility (5.07 cm2V-1s-1), and a minimum resistivity (7.1ｘ10-3 Ωcm). UV-visible spectroscopy studies showed that the MGZO thin films were a high transmittance over 80 % in the visible region. The band gap energy of MGZO thin films were almost 3.55eV regardless of increasing the sputtering power. |
| 저자 | 김인영1, 신승욱2, 허기석3, 김민성1, 문종하1, 이정용2, 김진혁1 |
| 소속 | 1전남대, 2KAIST 신소재공학부, 3한국생산기술(연) |
| 키워드 | Mg and Ga co-doped ZnO; Trans Parent Oxide; RF magnetron sputter; Flexible PET |
