| 초록 |
To fabricate optoelectronic or FET devices, generally required complex steps are lithography, thermal evaporation for source/drain electrode deposition, dielectric layer deposition, etc. The ink-filled pen can offer a unique approach to fabricate flexible paper based devices by using handmade patterning techniques. Herein, we report all-layers ink-pen written CuO based field effect transistor (FETs), where ink-pen drawn silver electrodes, PVP and CuO were used as gate/source/drain electrodes, a gate dielectric layer and an active semiconductor layer, respectively. Ink-filled pen approach offer great potential for recognizing suitable materials for large-area and low-cost electronic applications. Ink-pen written devices with ID–VD curve at VG= 0 shows a clear rectifying behavior with the conductance of CuO decreases monotonically as the gate potential increases, confirming that the as-written CuO FET is a p-type at room-temperature. This flexible paper based CuO-FET shows µFE of ~0.84 cm2/V.s. However, inkpen-written assisted with inkjet-printing FET shows mobility (µFE) of ~11.21 cm2/V.s at room temperature with on/off ratio ~104, and hole concentration of ~1012 cm-3. |
