| 학회 |
한국고분자학회 |
| 학술대회 |
2011년 가을 (10/06 ~ 10/07, 김대중 컨벤션센터) |
| 권호 |
36권 2호 |
| 발표분야 |
유기전자소자용 소재 및 소자(분자전자소재 부문위원회) |
| 제목 |
Single gate bandgap opening of bilayer graphene by dual molecular doping |
| 초록 |
The absence of band gap in pristine graphene is detrimental to the device function as post-silicon electronic devices. Bilayer graphene can serve a unique alternative for bandgap engineering by creating perpendicular electric field to break inversion symmetry of graphene. Here, we used controllable molecular doping on both sides of bilayer graphene to induce the doping-driven perpendicular electric field. The FET device shows gradual increment of off-resistance (from 2.4 to 22kΩ) according to the doping level, giving comparably high on/off ratio at the room temperature. The enhancement of device performance is attributed to the bandgap opening by inversion symmetry breaking, as well as the formation of disorder induced electron-hole puddles from inhomogeneous doping of charged impurities. The facile control of doping level and resultant performance enhancement will contribute to the development of graphene based next generation electronics devices. |
| 저자 |
조새벽, 박재성, 김현호, 강보석, 이성규, 김광수, 조길원
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| 소속 |
포항공과대 |
| 키워드 |
bilayer graphene; bandgap opening; molecular doping
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| E-Mail |
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