| 학회 |
한국고분자학회 |
| 학술대회 |
2011년 봄 (04/07 ~ 04/08, 대전컨벤션센터) |
| 권호 |
36권 1호 |
| 발표분야 |
반도체용 고분자소재 |
| 제목 |
Study on the leakage current reduction method in the R2R gravure printed thin film transistors |
| 초록 |
Roll-to-roll (R2R) gravure printing is a promised method for the manufacture of thin film transistors (TFTs) for the flexible and low cost electronics. To obtain printed stable and high performance TFTs in R2R gravure printing process, gravure printer should provide fine patterns and surface morphology of gate electrode and dielectric layer. One of the important factors to achieve fine electrical performance of the TFTs is leakage current path through dielectric layer. To minimize leakage current between top and bottom electrodes, printed dielectric layer has to be fine controlled. In this study, we fixed R2R gravure printing processes including web speed, roll pressure, heating chamber temperature, substrate but changed amount of coupling agent in the dielectric ink (PE003, Paru Co. Korea) to invest the effect of coupling agent in printed dielectric layer for realization of stable and high performance TFTs based on R2R gravure printing process. |
| 저자 |
염동선1, 한주경1, 이민진2, 이우규2, 조규진2
|
| 소속 |
1(주)파루, 2순천대 |
| 키워드 |
Roll-to-Roll (R2R) gravure; Dielectric layer; leakage current
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| E-Mail |
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