| 초록 |
The electrical reliability of organic field-effect transistors (OFETs) is critical issue for the long-term operation and their commercialization. The interface charge traps are the main cause of characteristic degradation during long-term operation. Herein, we investigated the operational stability of OFETs through bias stress experiment. Under bias stress, the threshold voltage shifts and the drain current decreases over stressing times due to formation of charge traps during applying bias stress. In this study, we focused on the effect of gate dielectric surface to bias induced stability of OFETs. We revealed that the functionality of polymer dielectric surface play a role in charge trapping of OFETs under sustained bias stress. We also investigated the dependence of trap formation on surface polarity of dielectric layer. |
