| 초록 |
In this work, we report the OTFT memory devices using the organic small molecule having a hydroxyl end group as a charge trap layer. In order to investigate the effect of hydroxyl groups on hysteresis, we use two type triphenylene derivatives (TPs) having different end group such as hydroxyl and methoxy group. While the methoxy end group TPs based OTFT showed the negligible memory window, the OTFT memory devices using the hydroxyl end group TPs as a charge trap layer showed a large memory window around 45 V when the gate bias from 50 V to -50 V. The trapped charge within the hydroxyl end group TPs charge trap layer was measured to be 8.47 × 1012 cm-2. In addition, the drain current (Ids) after writing and erasing remained more than three orders of ON/OFF ratio for 104 seconds. These results show that the hydroxyl end group TP is possible to use the charge trapping layer in OTFT memory devices. |
