| 초록 |
Organic memory devices offer a great amount of attractions compared to its inorganic counterpart because of flexibility, large-area coverage and integration. Among the various kinds of memories, resistive random access memory (ReRAM) shows very simple architecture, interposing thin polymer film between two electrodes. Herein, we demonstrated diblock copolymer(poly(styrene-b-methyl methacrylate))/fullerene([6,6]-phenyl-C61 butyric acid methyl ester (PCBM)) based ReRAM, where the diblock copolymer and fullerene are, respectively, utilized as an incorporation matrix and a charge trap material. This diblock copolymer provides a nanotemplate consisting of PS spherical domain and PMMA matrix. Because of the preferential intermixing propensity of PS and PCBM, PCBM molecules are incorporated with a PS spherical domain without aggregation. Based on this nanostructure, ReRAM exhibits stable and reproducible switching behavior at low operating voltages. |
