| 초록 |
Most chemical sensors based on 2D materials have been utilized in the platform with laterally defined active channels which restrict active surface area. We herein suggest a unique approach to fabricate self-formed active-2D semiconducting channel devices with very large surface areas, leading to superior gas sensing capability. Perpendicular growth of SnS2 nanocrystals with large surface area was realized through metal-assisted growth using pre patterned metal electrodes. The self-formed active-channel device shows extraordinarily outstanding NO2 selectivity as well as high response values (＞ 2000% at 10 ppm) for NO2. Furthermore, the NO2 gas response of our gas sensing device with perpendicularly self-formed SnS2 nanosheets is more than two orders of magnitude higher than that of an exfoliated SnS2-based device. Such a facile device fabrication method can be potentially applied to various systems in which surface area plays an important role. |
