| 학회 | 한국재료학회 |
| 학술대회 | 2011년 봄 (05/26 ~ 05/27, 제주 휘닉스 아일랜드) |
| 권호 | 17권 1호 |
| 발표분야 | B. Nanomaterials and Processing Technology((나노소재기술) |
| 제목 | Application of diameter controlled ZnO nanowire field effect transistors |
| 초록 | ZnO nanowires have been fabricated by vapor-liquid-solidification with hot-walled pulsed laser deposition method. The diameter of ZnO nanowire has been systematically controlled simply by changing the thickness of Au catalyst. Field effect transistors with different diameter have been fabricated by using photolithography and e-beam lithography. The threshold voltage of ZnO nanowire FET showed enhanced mode and depleted mode depending on the diameter of ZnO nanowires. This is mainly due to the change of the carrier concentration depending on the size of nanowires. We have fabricated ZnO nanowire inverters using nanowire FETs. This simple method to fabricate ZnO nano-inverter will be useful to open the possibility of ZnO nanoelectronic applications. |
| 저자 | 이상렬 |
| 소속 | 한국과학기술(연) |
| 키워드 | 나노선; ZnO |
