| 초록 |
Organic Field-Effect Transistors (OFETs) have gained lots of attention for a variety of potential applications over the past decades. However, despite the steadily rising charge carrier mobility, inefficient charge injection/extraction characteristics induced by high scale of contact resistance are considering as a bottleneck for practical use of OFETs. In this study, we showed a simple way to minimize the access resistance in OFETs by introducing the buried electrode (BE) structure through a small pressure during thermal annealing processes to polymer semiconductors. This method gives the effect of reducing contact resistance by shortening the charge-transporting distance in the c-axis direction from electrode to the bulk organic semiconductor layer, inducing the improved charge carrier mobility. Our results can suggest the advantages that are used simultaneously with the doping or interfacial layer insertion which were previously used to improve the contact resistance. |
