| 학회 | 한국재료학회 |
| 학술대회 | 2015년 가을 (11/25 ~ 11/27, 부산 해운대그랜드호텔) |
| 권호 | 21권 2호 |
| 발표분야 | F. 광기능/디스플레이 재료 |
| 제목 | High Performance Zinc Oxynitride-Based Thin-Film Transistors for Next-Generation Display Applications |
| 초록 | Increasing demands for high performance switching or driving transistors in the flat panel display industry have led to the development of high mobility metal oxide semiconductors such as In-Ga-Zn-O (IGZO). Thin-film transistors (TFT) incorporate such materials exhibit field effect mobility, exceeding 10 cm2/Vs, and are suitable for the fabrication of ultra definition (4000 x 2000 pixels), large size (> 70 inch) displays operating at extremely high frame rate (> 480 Hz). However, further advances in display technoligy aim at producing 3D image or driving organic light-emitting diodes (OLED) while satisfying the above criteria. In this regard, transistors with even higher field effect mobility (> 30 cm2/Vs) must be integrated in the backplane array. In this work, an alternative type of high mobility semiconductor, zinc oxynitride (ZnON), is studied by both thoretical first-principles calculations and experimental evaluation of thin films and TFT devices. |
| 저자 | 김현석 |
| 소속 | 충남대 |
| 키워드 | <P>Zinc Oxynitride (ZnON); Thin-Film Transistors (TFT)</P> |
