| 초록 |
Fluorine groups of the polymer dielectric have been recently nominated by many research groups because of its excellent electrical and chemical stability. Nevertheless, the difficulty of film formation on hydrophobic surface restricts the application of fluorinated polymer dielectric in soluble-processable organic field effect transistors (OFETs). In this study, We report the fabrication of high stability of solution-processable organic field-effect transistors (OFETs) that utilize cross-linked fluorinated polymer gate dielectrics. In addition, we investigate the effect of fluorine group on the interface traps through gate-bias stress experiment. As a result, all OFETs which were grown on the crosslinked fluorinated polymer dielectrics show not only chemical stable dielectric properties but also electrical stable dielectric than the samples on non-fluorinated surface. |
