| 초록 |
The AgInS2 epilayers with a chalcopyrite structure grown using a hot-wall epitaxy method have been confirmed to be a high quality crystal. From the optical absorption measurement, the temperature dependence of the energy band gap on AgInS2/GaAs was found to be Eg(T) = 2.1365 eV - (9.89 × 10-3 eV) T2/(2930 ＋ T). After the as-grown AgInS2/GaAs was annealed in Ag-, S-, and In-atmospheres, the origin of point defects of AgInS2/GaAs has been investigated by using the photoluminescence at 10 K. The native defects of VAg, VS, Agint, and Sint obtained from photoluminescence measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted AgInS2/GaAs to an optical p-type. Also, we confirmed that In in AgInS2/GaAs did not form the native defects because In in AgInS2 did exist in the form of stable bonds. |
