화학공학소재연구정보센터
학회 한국재료학회
학술대회 2014년 가을 (11/27 ~ 11/28, 대전컨벤션센터)
권호 20권 2호
발표분야 A. 전자/반도체 재료(Electronic and Semiconductor Materials)
제목 Effects of Growth Pressure on Morphology of ZnO Nanostrcutures by Chemical Vapor Transport
초록 Zinc oxide (ZnO) is an important II-VI semiconductor with remarkable properties and wide-range of applications in electronics, photo electronics, and sensors. ZnO with its wide direct-band gap of 3.37 eV and high-exciton-binding energy of 60 mV at room temperature makes it be one of the most extensively studied semiconductor materials.  
Chemical vapor transport (CVT) method has been widely used for the preparation of one-dimensional (1D) ZnO nanostructure. CVT allows for easy fabrication of nanomaterials by controlling essential parameters such as temperature, pressure, flow-rate of gases, substrates position, source materials and growth time. With proper selection and optimization of process parameters profuse structures with precise dimension can be obtained. By adjusting the above growth factors in the CVT process different shape and sized ZnO nanostructure can be grown.
  In this study, the effect of growth pressure on morphology of the ZnO nanostructures in chemical vapor transport method has been systematically investigated. Highly uniform aligned ZnO nanorods or multifaceted tripod structures were grown depending on the growth pressure. The mechanism governing the morphology change was explained by relative concentrations of Zn vapor, Oxygen vapor and supersaturation based on experimental observations. It was concluded that heterogeneous nucleation on the substrate is enhanced at low growth pressure, while homogeneous vapor phase nucleation is enhanced at high growth pressure. ZnO nanorods grown with 50nm and 250nm diameter were used for the fabrication of gas sensor for the detection of H2 gas.  
저자 Eadi Sunil Babu1, Soon-Ku Hong2
소속 1Department of Advanced Materials Engineering, 2Chungnam National Univ.
키워드 Zinc Oxide; Chemical Vapor Deposition; Supersaturation; Vapor Phase Nucleation
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