| 초록 |
In the 21st century, OLED (organic light-emitting diode) technology draws enormous attention of the display industry. OLED is widely applicable to various kinds of electronic devices due to its’ advantages, including low operation voltage, simple device structure, and high response time. In addition, its’ high flexibility on the substrates, contrast ratio, and wide viewing angle, make it a superior candidate for the flexible display. However, the pixel burn-in problem due to materials’ low stability at high operating voltage, shorten the device lifetime. So far, numerous approaches have been reported regarding p-type doping to operate at lower voltage, while, n-type doping is still a challenge. This study presents a new n-type dopant to assist electron injection at lower driving voltage. |
