| 학회 |
한국공업화학회 |
| 학술대회 |
2019년 봄 (05/01 ~ 05/03, 부산 벡스코(BEXCO)) |
| 권호 |
23권 1호 |
| 발표분야 |
무기재료_포스터 |
| 제목 |
Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing |
| 초록 |
Remarkable improvements in both structural and optical properties of wafer-scale hexagonal boron nitride (h-BN) films grown by metal-organic chemical vapor deposition (MOCVD) enabled by high-temperature post-growth annealing is presented. The enhanced crystallinity and homogeneity of the MOCVD-grown h-BN films grown at 1050 °C is attributed to the solid-state atomic rearrangement during the thermal annealing at 1600 °C. In addition, the appearance of the photoluminescence by excitonic transitions as well as enlarged optical band gap were observed for the post-annealed h-BN films as direct consequences of the microstructural improvement. The post-growth annealing is a very promising strategy to overcome limited crystallinity of h-BN films grown by typical MOCVD systems while maintaining their advantage of multiple wafer scalability for practical applications towards 2-dimensional electronics and optoelectronics. |
| 저자 |
정호경, 문석호, 김종규
|
| 소속 |
포항공과대 |
| 키워드 |
Hexagonal boron nitride (h-BN); MOCVD; post-growth annealing
|
| E-Mail |
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