| 학회 | 한국재료학회 |
| 학술대회 | 2010년 가을 (11/11 ~ 11/12, 무주리조트) |
| 권호 | 16권 2호 |
| 발표분야 | B. Nano materials and processing Technology(나노소재기술) |
| 제목 | Influence of Cross Linker to the Solution-Processable Organic-Inorganic Hybrid Dielectrics for Low Temperature Solution-Processed Zinc Oxide Thin-Film Transistors |
| 초록 | To realize advantages of flexible electronics, low-temperature solution processing is strongly desirable. In this study, we fabricated solution-processable gate dielectrics for solution-processable zinc oxide thin film transistors (TFTs) using a photosensitive organic-inorganic hybrid material based on organosiloxane, followed by heat treatment at 170oC. Especially, we have added fully methoxy methylated melamin cross linker for the improvement of dielectric film properties such as density, thermal stability, chemical resistance, and degassing at the low temperature. In addition, we confirmed the effect of cross linker by comparing the refractive index and the result of Fourier Transform infrared spectrometer(FT-IR), Thermo Gravimetric Analysis(TGA), Atomic force microscopic (AFM). We expect that our solution-processable hybrid materials based on siloxane-bonds are a candidate as physically and chemically suitable dielectric for realizing low-temperature solution-processable oxide devices on flexible substrates. |
| 저자 | 정양호, 문주호, 송근규, 전태환, 김아름, 정영민 |
| 소속 | 연세대 |
| 키워드 | Gate Dielectric; Zinc Oxide Thin-Film Transistors |
