| 초록 |
The fabrication of smaller devices is currently a challenge in microelectronic and microelectromechanical systems. Silicon-containing photoresists are gaining increasing interest for bilayer resist systems due to their high oxidation resistance. Polyhedral oligomeric silsesquioxane (POSS) was chosen as the organic–inorganic hybrid component because POSS molecules have nonreactive organic groups for polymer synthesis as well as excellent thermal and mechanical properties. Also, the POSS-containing photoresist was diazo-functionalized to induce both photobleaching and a polarity change in the deep ultraviolet (UV) region without the use of a photoacid generator. Thus, no post-exposure delay problems occurred, such as acid diffusion and the appearance of T-top and foot profiles caused by airborne or substrate contamination, which hinder fabrication of nanometer-scale patterns. |
