| 초록 |
The influence of the oxygen plasma generated in the sputtering process for electrode deposition on the pentacene thin film was investigated to construct a top-contact (TC) transistor. Reactive oxygen species seriously degraded electrical properties of pentacene films during the deposition of RuOx electrodes, resulting in device failure. The leakage current increased by about two orders of magnitude and the subthreshold slope also increased by 6.5 times in the off-region. The top surface of pentacene films was oxidized by oxygen plasma and C-O and C=O bonds not created. The pentacenequinone derivatives were confirmed by X-ray photoelectron spectroscopy. Oxidation of pentacene films generates charge trapping at the pentacene/electrode interface, which produces a leakage channel between sources and drain electrodes. We believe that this side effect of oxygen plasma on the fabrication of TC-devices should be carefully considered. |
