| 초록 |
Influence of a polymer modified reduced graphene oxide (PMrGO) interlayer on the polarization and coercive field of PVDF-TrFE thin films was reported. Ultrathin PMrGO layer was interfaced between the bottom electrode and ferroelectric layer, which is further used to fabricate capacitor and transistor architectures. When compared with devices without interlayer, a sandwiched structure Au/PMrGO/ P VDF-TrFE /Au shows improved ferroelectric properties. Transistors fabricated by using solution processable dicyanomethylene-substitued quinoidal quaterthiophene (QQT(CN)4) semiconducting layer showed reliable I−V hysteresis with ON/OFF ratio ~ 1 × 105 at a sweeping gate voltage of ±20 V, promising endurance cycles and retention properties. The PMrGO interlayers maximize the crystallinity and enhance the crystal dipole orientation of the ferroelectric polymer. |
