| 학회 | 한국재료학회 |
| 학술대회 | 2017년 봄 (05/17 ~ 05/19, 목포 현대호텔) |
| 권호 | 23권 1호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Improved electrical characteristics of atomic layer deposition-grown SnS2 field effect transistor using ZrO2 sandwich structure |
| 초록 | Semiconducting transition metal dichalcogenides have attracted numerous attention over the past decade in the field of nanoelectronics. However, the size of the materials was around few tens of micrometers in area at best which were prepared using mechanical exfoliation and chemical vapor deposition. Moreover, these materials were grown at high temperatures over 600 ℃, where manufacturing devices on the flexible substrates are compromised. In this work, crystalline SnS2 layers were grown on Si/SiO2 substrate by atomic layer deposition (ALD) [1]. Due to the nature of ALD method, large-area coverage was possible. The growth/post-annealing temperature was as low as 150/300 ℃. We fabricated 20 layer thick (~12 nm) SnS2 field-effect transistors (FET) by using conventional photolithography and lift-off for the electrode formation, and reactive ion etching for the channel region definition. Electrical measurements revealed that our ALD-grown SnS2 FET has marginal characteristics which could be enhanced further by process optimization such as contact barrier engineering and surface encapsulation. References 1. G. Ham, S. Shin, J. Park, H. Choi, J. Kim, Y. A. Lee, H. Seo, and H. Jeon, ACS Appl. Mater. Interfaces, 18, 8889 (2013). |
| 저자 | 서호준, 이정수, 이건우, 김소희, 설원제, 이승백 |
| 소속 | 한양대 |
| 키워드 | <P>Field effect transistors; Atomic layer deposition; SnS<SUB>2</SUB></P> |
