| 학회 |
한국공업화학회 |
| 학술대회 |
2019년 가을 (10/30 ~ 11/01, 제주국제컨벤션센터(ICC JEJU)) |
| 권호 |
23권 2호 |
| 발표분야 |
(에너지저장·변환1) 차세대 태양전지 기술 |
| 제목 |
Mechanisms of improved performance of Cu(In,Ga)Se2 solar cells by Cesium post-deposition treatments |
| 초록 |
Heavy-alkali post-deposition treatments (PDTs) utilizing Cs has become an indispensable step in producing high performance Cu(In,Ga)Se2 (CIGS) solar cells. Here, we present an extensive study on the effects of CsF-PDT on material properties of CIGS absorbers and the performance of the final solar devices. Incorporation of an optimized amount of Cs into CIGS resulted in a significant improvement of the device efficiency up to 18.4%. Strong segregation of Cs at the front and rear interfaces as well as along grain boundaries of CIGS was observed via high resolution chemical analysis such as atomic probe tomography. Study of defect chemistry using photoluminescence and capacitance-based measurements revealed that both deep-level donor-like defects and deep-level acceptor-like defects are passivated by CsF-PDT. Additionally, it was found that CsF-PDT induces a slight change in the energetics of VCu, the most dominant point defect that is responsible for the p-type conductivity of CIGS. |
| 저자 |
정기욱, 신병하
|
| 소속 |
한국과학기술원 |
| 키워드 |
Cu(In; Ga)Se2; thin-film solar cell; heavy-alkali incorporation; post-deposition treatment
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| E-Mail |
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