| 학회 |
한국화학공학회 |
| 학술대회 |
2012년 가을 (10/24 ~ 10/26, 부산 BEXCO) |
| 권호 |
18권 2호, p.2230 |
| 발표분야 |
재료 |
| 제목 |
Low voltage, hysteresis free and high mobility transistors from all-inorganic colloidal nanocrystals |
| 초록 |
High mobility solution processed all-inorganic solid state nanocrystal (NC) transistors with low operation voltage and near-zero hysteresis are demonstrated using high capacitance ZrOx and hydroxyl-free CytopTM gate dielectric materials. The use of inorganic capping ligands (In2Se42- and S2-) allowed us to achieve high electron mobility in the arrays of solution-processed CdSe nanocrystals. We also studied the hysteresis behavior and switching speed of NC-based field effect devices. Collectively, these analyses helped to understand the charge transport and trapping mechanisms in all-inorganic NCs arrays. Finally, we have examined the rapid thermal annealing as an approach toward high performance solution processed NCs-based devices and demonstrated transistor operation with mobility above 30 cm2/Vs without compromising low operation voltage and hysteresis. |
| 저자 |
정대성 |
| 소속 |
동아대 |
| 키워드 |
nanocrystal; field effect transistor; mobility; hysteresis
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| E-Mail |
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| VOD |
VOD 보기 |
| 원문파일 |
초록 보기 |
