| 학회 | 한국재료학회 |
| 학술대회 | 2010년 봄 (05/13 ~ 05/14, 삼척 팰리스 호텔) |
| 권호 | 16권 1호 |
| 발표분야 | G. Display (LCD, PDP, OLED) Materials(디스플레이 재료) |
| 제목 | Investigation of optoelectrical properties of ITO/Ni/ITO films deposited by magnetron sputter process |
| 초록 | Transparent conducting ITO/Ni/ITO (INI) films were deposited by RF magnetron sputtering of Sn-doped In2O3 and DC magnetron sputtering of Ni on unheated polycarbonate substrates. Ni interlayers with thicknesses of 5, 10, and 20 nm were used as intermediate metallic layers. Changes in the work function and optoelectrical and structural properties of the films were examined with respect to Ni layer thickness. The structural and optoelectrical properties of the films were influenced by Ni thickness. As-deposited ITO single layer films showed In2O3 diffraction peaks for the (222) and (400) planes, while after insertion of the Ni layer between ITO films, these diffraction peaks disappeared. The electrical resistivity decreased by the Ni intermediated film and the optical transmittance also decreased due to increased optical absorption. The figure of merit reached a maximum of 2x10-3 Ω-1 for a 5 nm-thick Ni film inserted into an INI film, which is greater than the TC (5.8x10-4 Ω-1) of as-deposited ITO films. |
| 저자 | 신창호, 김대일, 정철우 |
| 소속 | 울산대 |
| 키워드 | ITO; Ni; Sputtering; Sheet resistance; Figure of merit |
