초록 |
Nanotechnology and semiconductor industries have embraced directed self-assembly of block copolymers as one of next-generation lithographic tools to access sub-10 nm technical node. To achieve the ultimate goal, tailoring properties and structures in block copolymer materials is required, which has been one of significant and challenging aspects in polymer science. In this talk, we will discuss the design of block copolymers that can extensively push the limit of a critical dimension to sub-10 nm regime. To do so, the structure of the copolymer should be designed to exhibit high interaction parameter for microphase separation at low degree of polymerization. Next, finding effective synthetic routes will be discussed to emphasize how the design of block copolymers can be realized. Finally, we will discuss how we evaluate synthesized block copolymers in terms of reducing the size of periodic patterns, which is directly correlated to lithographic performance. |