| 학회 |
한국재료학회 |
| 학술대회 |
2011년 가을 (10/27 ~ 10/29, 신라대학교) |
| 권호 |
17권 2호 |
| 발표분야 |
E. Structural Materials and Processing Technology(구조재료 및 공정기술) |
| 제목 |
Optimum conditions of growth for MgGa2Se4 epilayers |
| 초록 |
A stoichiometric mixture of evaporating materials for MgGa2Se4 single crystal thin films was prepared from horizontal electric furnace. The crystal structure of these compounds has a rhomboheral structure with lattice constants a0= 3.953 Å, c0= 38.890 Å. To obtain the single crystal thin films, MgGa2Se4 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were 610℃ and 400℃, respectively. The crystalline structure of the single crystal thin films was investigated by the double crystal X-ray rocking curve and X-ray diffraction ω-2θ scans. |
| 저자 |
Kwangjoon Hong |
| 소속 |
Department of physics Chosun Univ. |
| 키워드 |
optimum conditions of growth; Hot Wall Epitaxy (HWE) system; double crystal X-ray rocking curve; X-ray diffraction
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| E-Mail |
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