| 학회 |
한국재료학회 |
| 학술대회 |
2019년 가을 (10/30 ~ 11/01, 삼척 쏠비치 호텔&리조트) |
| 권호 |
25권 2호 |
| 발표분야 |
A. 전자/반도체 재료 분과 |
| 제목 |
High endurance and reliable multi-bit operation in a Ta2O5 based resistive switching device |
| 초록 |
A comparative study was performed to demonstrate the effect of electrode material on resistive switching behavior of Ta2O5 based device. Compared to Pt top electrode which has inert chemical characteristic, applying TiN top electrode showed promising endurance characteristic up to 109 and highly reliable 4-bit (16 states) operation. From the various structural analysis results, it was revealed that the distinctive resistive switching performances are originated from the role of oxygen deficient layer (TaOx) between Ta2O5 and TiN top electrode. That is, the interfacial layer can be an oxygen reservoir which prevents the severe consumption of oxygen during the repetitive resistive switching for high endurance characteristic and provide the role of appropriate load resistor to make the resistive switching device compatible to electrical pulse based operation for stable multi-bit operation. The results of this study suggest that the optimized interfacial layer is essential for high performance resistive switching device for future non-volatile memory applications. |
| 저자 |
Min Kyu Yang |
| 소속 |
Department of IT Convergence Engineering |
| 키워드 |
Ta2O5; resistive switching; ReRAM
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| E-Mail |
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