| 초록 |
A femtosecond laser (wavelength: 800 nm, full width at half maximum: 50 fs) joining technique was employed to reduce the contact resistance between the nanowires, significantly lowering the surface resistance of thin films composed of the AgNWs. Highly localized joining of the AgNWs was possible at the junction between the nanowires. Due to local electric field enhancement and limited thermal diffusion, femtosecond laser irradiation enabled the joining of AgNW only at the junction, maintaining the original crystal structure. The femtosecond laser nanowelding process did not destroy or thermally agglomerate the nanowire (NW) joint. The femtosecond laser irradiation has significantly less damage to flexible substrates than nanosecond laser irradiation. The proposed nanojoining process has strong potential for fabricating flexible transparent conductive electrodes. |
