| 초록 |
Lead based ferroelectric materials such as PbTiO3, PZT and PLZT have attractedgreat interest in recent years because of their unique set of electrical and opticalproperties. These properties are being utilized in applications to ULSI memory devices,integrated optical devices, piezoelectric devices and infrared devices.1,2 In this work, to study the structural and electrical properties of PbTiO3 thin films,films were deposited on p-type Si(100) substrate by plasma enhanced MOCVD usingTi(O-i-C3H7)4, Pb(tmhd)2 and oxygen. The as-deposited PbTiO3 films were treated byrapid thermal annealing (RTA) method in oxygen ambient. The effects of annealingconditions on the properties of PbTiO3 films were investigated in terms of crystallinity,microstructure, leakage current and dielectric constant.
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