| 학회 |
한국고분자학회 |
| 학술대회 |
2005년 가을 (10/13 ~ 10/14, 제주 ICC) |
| 권호 |
30권 2호 |
| 발표분야 |
고분자 구조 및 물성 |
| 제목 |
Studies on factors affecting crystalline morphology and surface topology of vinylidene fluoride and trifluoroethylene (72/28) copolymers using AFM |
| 초록 |
The copolymers of vinylidene fluoride(VDF) and trifluoroethylene(TrFE)(VDF 50~85mole%) exhibit ferroelectric behavior below Curie transition(Tc)[1] and have potential applications as nonvolatile ferroelectric polymeric random access memory (NvFePoRAM) devices. NvFePoRAM devices currently available in the market having polymeric film thickness ＞100nm exhibit relatively slow read-write time(~50μSec) and high switching voltage(＞10V), best suited for memory card applications where the slower read and write time as well as the 108 cycle capability are adequate[2]. Our objective is to fabricate NvFePoRAM for flash memory applications in which the polymeric film thickness should be ＜100nm in order to operate them below 10V to achieve 1MV/cm for the switching of electrical dipoles[3]. It has been previously reported that for polymeric films at a critical thickness below 100nm, the crystallization process is strongly hindered, resulting in a low crystallinity in these films. This low crystallinity leads to reduction in the functional properties such as ferroelectric polarization and increase in dipole switching time upon external electric field for film thickness |
| 저자 |
A. Anand Prabu1, 이종순1, 김갑진1, 이한섭2
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| 소속 |
1경희대, 2인하대 |
| 키워드 |
P(VDF/TrFE) (72/28); Crystalline morphology; Surface topology; AFM; Thin film; Thickness; Memory; NvFePoRAM
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| E-Mail |
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